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SEMICONDUCTOR
TECHNICAL DATA
High Voltage Switching. FEATURES
High Reliability. Small surface mounting type (USC).
CATHODE MARK B 1
KDS135
SILICON EPITAXIAL PLANAR DIODE
G K
A
H F
2 D
E
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range Pad dimension of 4 4mm
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 300 250 300 100 2 150* 150 -55 150 UNIT V V mA mA A mW
1. ANODE 2. CATHODE
M M DIM A B C D E F G H I J K L M
MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6
USC
* Mounted on a glass epoxy cirvuit board of 20 20mm
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR(1) IR(2) CT trr
)
TEST CONDITION IF=100mA VR=250V VR=300V VR=0V, f=1MHz IR=30mA, IF=30mA MIN. TYP. 1.0 0.04 1.35 30 MAX. 1.2 0.2 100 3 100 UNIT V A pF nS
SYMBOL
Marking
Type Name
JA
2001. 6. 11
Revision No : 0
L
1/2
KDS135
I F - VF
10 5 10
4
IR - VR
100 REVERSE CURRENT I R (nA)
Ta=25 C
Ta=25 C
FORWARD CURRENT I F (A)
10 3 10 2 10 1 0.1 0.01 0.001 0.0001 0 200 400 600 800 1000 1200
10
1
0.1
0
50
100
150
200
250
300
FORWARD VOLTAGE VF (mV)
REVERSE VOLTAGE VR (V)
C T - VR
TERMINAL CAPACITANCE C T (pF) 1.5 1.4 1.3 1.2 1.1 1.0
f=1MHz Ta=25 C
0
10
20
30
REVERSE VOLTAGE VR (V)
2001. 6. 11
Revision No : 0
2/2

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